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SUM70060E-GE3 Tech Specifications

MOSFET N-CH 100V 131A D2PK TO263

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Series ThunderFET®
Power Dissipation (Max) 375W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 100V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package TO-263 (D2Pak)
Rds On (Max) @ Id, Vgs 5.6 mOhm @ 30A, 10V
Packaging Bulk
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 3330pF @ 50V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C 131A (Tc)
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