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IPD60R1K4C6 Tech Specifications

IPD60R1K4C6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Discontinued
Number of Terminations 2
Subcategory FET General Purpose Power
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 28.4W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 90μA
Current - Continuous Drain (Id) @ 25°C 3.2A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Pulsed Drain Current-Max (IDM) 8A
Avalanche Energy Rating (Eas) 26 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
Pin Count 4
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 1.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds 200pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 9.4nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Drain Current-Max (Abs) (ID) 3.2A
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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IPD60R1K4C6 Documents

Download datasheets and manufacturer documentation for IPD60R1K4C6

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