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IPD60R600E6ATMA1 Tech Specifications

Trans MOSFET N-CH 650V 7.3A 3-Pin(2+Tab) TO-252

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Packaging Bulk
Series CoolMOS™ E6
Part Status Not For New Designs
Number of Terminations 2
Min Operating Temperature -55°C
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 63W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 200μA
Current - Continuous Drain (Id) @ 25°C 7.3A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Max Dual Supply Voltage 600V
Pulsed Drain Current-Max (IDM) 19A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 600m Ω @ 2.4A, 10V
Input Capacitance (Ciss) (Max) @ Vds 440pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V
Vgs (Max) ±20V
Drain-source On Resistance-Max 0.6Ohm
Avalanche Energy Rating (Eas) 133 mJ
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