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IPDD60R080G7XTMA1 Tech Specifications

MOSFET NCH 650V 83A PG-HDSOP-10

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 10-PowerSOP Module
Packaging Tape & Reel (TR)
Part Status Active
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 174W Tc
Turn On Delay Time 19 ns
Rds On (Max) @ Id, Vgs 80m Ω @ 9.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1640pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 42nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 29A
Drain to Source Breakdown Voltage 600V
Height 2.5mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Operating Temperature -55°C~150°C TJ
Series CoolMOS™ G7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Channels 1
Power Dissipation 174W
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 490μA
Current - Continuous Drain (Id) @ 25°C 29A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 61 ns
Gate to Source Voltage (Vgs) 20V
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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IPDD60R080G7XTMA1 Documents

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