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IPDD60R102G7XTMA1 Tech Specifications

650v, 66a, 102mOhms, DDPAK Mosfet

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case 10-PowerSOP Module
Packaging Tape & Reel (TR)
Part Status Active
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 390μA
Current - Continuous Drain (Id) @ 25°C 23A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Operating Temperature -55°C~150°C TJ
Series CoolMOS™ G7
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 139W Tc
Rds On (Max) @ Id, Vgs 102m Ω @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1320pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
RoHS Status ROHS3 Compliant
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IPDD60R102G7XTMA1 Documents

Download datasheets and manufacturer documentation for IPDD60R102G7XTMA1

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