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IRFSL3806PBF Tech Specifications

MOSFET N-CH 60V 43A TO-262

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) 40
Power Dissipation-Max 71W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 15.8m Ω @ 25A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 50V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 47 ns
Continuous Drain Current (ID) 43A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 170A
Height 9.65mm
Width 4.826mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Obsolete
Number of Terminations 3
Resistance 15.8MOhm
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) 260
Number of Elements 1
Element Configuration Single
Power Dissipation 71W
Turn On Delay Time 6.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 50μA
Current - Continuous Drain (Id) @ 25°C 43A Tc
Rise Time 40ns
Vgs (Max) ±20V
Turn-Off Delay Time 49 ns
Threshold Voltage 4V
Drain to Source Breakdown Voltage 60V
Recovery Time 33 ns
Length 10.668mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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