PDTB113EQAZ Tech Specifications

TRANS PREBIAS PNP 3DFN

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer Nexperia
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP - Pre-Biased
Series Automotive, AEC-Q101
Resistor - Base (R1) (Ohms) 1k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Current - Collector (Ic) (Max) 500mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 100mV @ 2.5mA, 50mA
Supplier Device Package DFN1010D-3
Resistor - Emitter Base (R2) (Ohms) 1k
Power - Max 325mW
Package / Case 3-XDFN Exposed Pad
Frequency - Transition 150MHz
Current - Collector Cutoff (Max) 500nA
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PDTB113EQAZ Documents

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PDTB113EQAZ Nexperia USA Inc. Transistor BJT Pra-Bias
PDTB113ES,126 NXP Semiconductors / Freescale Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2592
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PDTB113ET,215 Nexperia Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2712
PDTB113ET,215 Nexperia USA Inc. Transistor BJT Pra-Bias
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