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SIA406DJ-T1-GE3 Tech Specifications

MOSFET N-CH 12V 4.5A SC-70-6

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 1V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Package / Case PowerPAK® SC-70-6
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1380pF @ 6V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Detailed Description N-Channel 12V 4.5A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6 Single
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package PowerPAK® SC-70-6 Single
Rds On (Max) @ Id, Vgs 19.8 mOhm @ 10.8A, 4.5V
Packaging Tape & Reel (TR)
Other Names SIA406DJ-T1-GE3TR SIA406DJT1GE3
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 23nC @ 5V
FET Feature -
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
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SIA406DJ-T1-GE3 Documents

Download datasheets and manufacturer documentation for SIA406DJ-T1-GE3

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