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SIHF22N60E-GE3 Tech Specifications

MOSFET N-CH 600V 21A TO220

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 180 mOhm @ 11A, 10V
Packaging Original-Reel®
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 100V
FET Type N-Channel
Drain to Source Voltage (Vdss) 600V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Series E
Power Dissipation (Max) 35W (Tc)
Package / Case TO-220-3 Full Pack
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
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SIHF22N60E-GE3 Documents

Download datasheets and manufacturer documentation for SIHF22N60E-GE3

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