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SIS434DN-T1-GE3 Tech Specifications

MOSFET N-CH 40V 35A PPAK 1212-8

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Vishay / Siliconix
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.2V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET®
Power Dissipation (Max) 3.8W (Ta), 52W (Tc)
Package / Case PowerPAK® 1212-8
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs 7.6 mOhm @ 16.2A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 1530pF @ 20V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
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SIS434DN-T1-GE3 Documents

Download datasheets and manufacturer documentation for SIS434DN-T1-GE3

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