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NTD4809NH-1G Tech Specifications

MOSFET N-CH 30V 9A IPAK

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer ON Semiconductor
Factory Lead Time 3 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Package / Case TO-251-3 Stub Leads, IPak
Operating Temperature -55°C~175°C TJ
Published 2002
Part Status Obsolete
ECCN Code EAR99
Pin Count 4
Power Dissipation-Max 1.3W Ta 52W Tc
Power Dissipation 2W
Rds On (Max) @ Id, Vgs 9m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 11.5V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 58A
Gate to Source Voltage (Vgs) 20V
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 4
Packaging Tube
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Element Configuration Single
FET Type N-Channel
Vgs(th) (Max) @ Id 2.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9.6A Ta 58A Tc
Rise Time 18ns
Vgs (Max) ±20V
Turn-Off Delay Time 22 ns
Threshold Voltage 2.1V
Drain to Source Breakdown Voltage 30V
RoHS Status RoHS Compliant
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NTD4809NH-1G Documents

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