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DTA123JKAT146 Tech Specifications

TRANS PREBIAS PNP 200MW SMT3

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Pra-Bias
Manufacturer ROHM Semiconductor
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Surface Mount
Number of Pins 3
Published 2009
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Min Operating Temperature -55°C
Voltage - Rated DC -50V
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Operating Supply Voltage 50V
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Transition Frequency 250MHz
Max Breakdown Voltage 50V
hFE Min 80
Continuous Collector Current -100mA
Height 1.1mm
Width 1.6mm
REACH SVHC No SVHC
Lead Free Lead Free
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
JESD-609 Code e1
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Max Operating Temperature 150°C
Subcategory BIP General Purpose Small Signal
Max Power Dissipation 200mW
Terminal Form GULL WING
Current Rating -100mA
Base Part Number DTA123
Max Output Current 100mA
Number of Elements 1
Number of Channels 1
Power Dissipation 200mW
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 500nA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage -300mV
Frequency - Transition 250MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Length 2.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
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DTA123JKAT146 Documents

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